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AWT6632 help3dc tm umts1900 (band 2) lte/wcdma/cdma linear pa module data sheet - rev 2.1 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 1: block diagram features ? cdma/evdo, wcdma/hspa, lte compliant ? 3rd generation help tm technology ? high effciency: (r99 waveform) ? 40 % @ p out = +29 dbm ? 22 % @ p out = +16.75 dbm ? simpler calibration with only 2 bias modes ? optimized for smps supply ? low quiescent current: 8 ma ? low leakage current in shutdown mode: <5 a ? internal voltage regulator ? integrated daisy chainable directional couplers with cpl in and cpl out ports ? optimized for a 50 ? system ? low profle miniature surface mount package ? internal dc blocks on in/out rf ports ? 1.8 v control logic ? rohs compliant package, 260 o c msl-3 applications ? wireless handsets and data devices for: ? wcdma/hspa/lte pcs band 2 ? cdma/evdo bandclass 1 & 14 ? band 25 lte devices product description the AWT6632 pa is designed to provide highly linear output for wcdma, cdma and lte handsets and data devices with high effciency at both high and low power modes. this help3dc tm pa can be used with an external switch mode power supply (smps) to improve its effciency and reduce current consumption further at medium and low output powers. a daisy chainable directional coupler is integrated in the module thus eliminating the need of external couplers. the device is manufactured on an advanced ingap hbt mmic technology offering state-of-the-art reliability, temperature stability, and ruggedness. there are two selectable bias modes that optimize effciency for different output power levels, and a shutdown mode with low leakage current, which increases handset talk and standby time. the self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, effciency, and linearity in a 50 ? system. aw t6632 1 2 3 4 5 10 9 8 7 6 v bat t rf in v mode2 (n/c) v mode 1 v en cp l ou t gn d cp l in rf ou t v cc bias control voltage regulation cp l gnd at slug (pad ) 02/2012
2 figure 2: pinout (x-ray top view) table 1: pin description v bat t rf in v mode2 (n/c) v mode 1 v en 1 2 3 4 56 7 8 9 10 cp l ou t gn d cp l in rf ou t v cc 1 2 3 4 56 7 8 9 10 pin name description 1 v batt battery voltage 2 rf in rf input 3 v mode2 (n/c) no connection 4 v mode1 mode control voltage 1 5 v en pa enable voltage 6 cpl out coupler output 7 gnd ground 8 cpl in coupler input 9 rf out rf output 10 v cc supply voltage data sheet - rev 2.1 02/2012 AWT6632
3 electrical characteristics table 2: absolute minimum and maximum ratings stresses in excess of the absolute ratings may cause permanent damage. functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability. table 3: operating ranges the device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defned in the electrical specifcations. notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. parameter min max unit supply voltage (v cc ) 0 +5 v battery voltage (v batt ) 0 +6 v control voltages (v mode1 , v enable ) 0 +3.5 v rf input power (p in ) - +10 dbm storage temperature (t stg ) -40 +150 c parameter min typ max units comments operating frequency (f) 1850 - 1915 mhz supply voltage (v cc ) +0.5 +3.4 +4.35 v p out < +29.0 dbm battery voltage (v batt ) +3.1 +3.4 +4.35 v p out < +29.0 dbm enable voltage (v enable ) +1.35 0 +1.8 0 +3.1 +0.5 v pa on pa shut down mode control voltage (v mode1 ) +1.35 0 +1.8 0 +3.1 +0.5 v low bias mode high bias mode rf output power (p out ) r99 wcdma, hpm hspa (mpr = 0), hpm lte, hpm r99 wcdma, lpm hspa (mpr = 0), lpm lte, lpm 28.2 (1) 27.2 (1) 27.2 (1) 15.95 (1) 14.95 (1) 14.95 (1) 29.0 28.0 28.0 16.75 15.75 15.75 29.0 28.0 28.0 16.75 15.75 15.75 dbm 3gpp ts 34.121-1, rel 8 table c.11.1.3, for wcdma subtest 1 ts 36.101 rel 8 for lte cdma output power hpm lpm 27.4 (1) 14.95 (1) 28.2 15.75 - - dbm cdma2000, rc-1 case temperature (t c ) -30 - +90 c data sheet - rev 2.1 02/2012 AWT6632
4 table 4: electrical specifcations - wcdma operation (r99 waveform) (t c = +25 c, v cc = v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) aclr and effciency measured at 1880 mhz. (2) noise measured at 1930 mhz to 1990 mhz. pa ra me te r mi n ty p ma x uni t co mments p ou t v mo de 1 ga in 25 12 27 14 29 16 db +2 9. 0 db m +1 6. 75 db m 0 v 1. 8 v ac lr 1 at 5 mh z of fs et (1 ) - - -4 2 -4 0 -39 -37 db c +2 9. 0 db m +1 6. 75 db m 0 v 1. 8 v ac lr 2 at 10 mh z of fs et - - -5 5 -5 5 -48 -48 db c +2 9. 0 db m +1 6. 75 db m 0 v 1. 8 v po we r-a dded e ffi ci en cy (1 ) 36 20 40 23 - - % +2 9. 0 db m +1 6. 75 db m 0 v 1. 8 v qu ie sce nt cu rre nt (i cq ) low bi as m ode -1 01 5m av mo de 1 = +1 .8 v m ode co nt ro l cu rre nt -0 .2 0. 4m at hr ou gh v mo de pi n, v mo de 1 = +1 .8 v en abl e cu rre nt -0 .3 0. 5m at hr ou gh v en able pi n ba tt cu rre nt -2 .5 5m at hr ou gh v ba tt pi n, v mo de 1 = +1 .8 v leakage cu rre nt -3 4 a v ba tt = +4 .2 v, v cc = +4 .2 v, v en able = 0 v, v mo de 1 = 0 v no is e in re ce iv e ba nd (2 ) -- 13 4- db m/ hz p ou t < +2 9. 0 db m, v mo de 1 = 0v -- 140- db m/ hz p ou t < 16 .7 5 db m, v mo de 1 = +1 .8 v ha rm on ic s 2f o 3f o, 4f o - - -3 9 -6 0 -3 5 -5 0 db c p ou t < +2 9. 0 db m in pu t im pedan ce -2 :1 - vsw r co up li ng fact or -2 0- db dire ct iv it y- 22 -d b co up le r in - ou t da is y ch ai n in se rt io n los s -0 .2 5- db 698 mh z to 2620 mh z pi n 6 to 8 s hut down mo de sp ur io us ou tp ut leve l (a ll sp ur io us ou tp ut s) -- -7 0d bc p ou t < +2 9. 0 db m in -b an d l oad vswr < 5: 1 ou t- of - ban d lo ad vswr < 10 :1 ap pl ie s ov er al l oper at in g co nd it io ns load mi sm at ch st re ss wi th no perm an en t degr adat io n or fa il ur e 8: 1- - vsw ra ppli es ov er fu ll oper at in g ra ng e ph ase de lt a (h pm -l pm )- 10 -d eg data sheet - rev 2.1 02/2012 AWT6632
5 notes: (1) aclr and effciency measured at 1880 mhz. table 5: electrical specifcations - lte operation (rb = 12, start = 0, qpsk) (t c = +25 c, v batt = v cc = +3.4 v, v enable = +1.8 v, 50 ? system) pa ra me te r mi n ty p ma x unit co mments p ou t v mo de 1 ga in 24 12 26.5 14 29 16 db + 28. 0 db m +1 5. 75 db m 0 v 1. 8 v ac lr e- ut ra at 10 mh z o ffs et - - -3 9 -3 8 -36 -35 db c + 28. 0 db m +1 5. 75 db m 0 v 1. 8 v ac lr 1 ut ra (1 ) at 7. 5 mh z o ffs et - - -40 -3 9 -37 -36 db c + 28. 0 db m +1 5. 75 db m 0 v 1. 8 v ac lr 2 ut ra at 12 .5 mh z of fs et - - -6 2 -6 2 -58 -58 db c + 28. 0 db m +1 5. 75 db m 0 v 1. 8 v po we r-a dded e ffi ci en cy (1 ) 33 17 36 20 - - % + 28. 0 db m +1 5. 75 db m 0 v 1. 8 v sp ur io us ou tp ut lev el (a ll sp ur io us ou tp ut s) -- <- 70 db c p ou t + 28. 0 db m in -b an d l oad vsw r < 5: 1 ou t- of -b an d l oad vswr < 10 :1 a ppl ie s ov er al l oper at in g co nd it io ns load mi sm at ch st re ss wi th no perm an en t degr adat io n or fa il ur e 8: 1- -v sw ra ppl ie s ov er fu ll oper at in g ra ng e data sheet - rev 2.1 02/2012 AWT6632
6 table 6: electrical specifcations - cdma operation (cdma 2000, rc-1) (t c = +25 c, v cc = v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) acpr and effciency measured at 1880 mhz. pa ra me te r mi n ty p ma x unit co mments p ou t v mo de 1 ga in 24 12 26 14 28 16 db + 28. 2 db m +1 5. 75 db m 0 v 1. 8 v ad ja ce nt ch an ne l po we r at +1 . 25 mh z o ffs et (1 ) pr im ar y ch an ne l bw = 1. 23 mh z ad ja ce nt ch an ne l bw = 30 kh z - - -5 0 -5 0 -46 -46 db c + 28. 2 db m +1 5. 75 db m 0 v 1. 8 v ad ja ce nt ch an ne l po we r at + 1. 98 mh z of fs et (1 ) pr im ar y ch an ne l = 1. 23 mh z ad ja ce nt ch an ne l = 30 kh z - - -5 5 -6 0 -51 -56 db c + 28. 2 db m +1 5. 75 db m 0 v 1. 8 v po we r-a dded e ffi ci en cy (1 ) - - 37 20 - - % + 28. 2 db m +1 5. 75 db m 0 v 1. 8 v sp ur io us ou tp ut leve l (a ll sp ur io us ou tp ut s) -- <- 70 db c p ou t < + 28. 2 db m in -b an d lo ad vswr < 5: 1 ou t- of -b an d lo ad vswr < 10 :1 a ppl ie s ov er al l opera ti ng ra ng es load mi sm at ch st re ss wi th no perm an en t degr adat io n or fa il ur e 8: 1- -v sw ra ppl ie s ov er fu ll oper at in g ra ng e data sheet - rev 2.1 02/2012 AWT6632
7 application information to ensure proper performance, refer to all related application notes on the anadigics web site: http://www.anadigics.com shutdown mode the power amplifer may be placed in a shutdown mode by applying logic low levels (see operating ranges table) to the v enable and v mode1 voltages. bias modes the power amplifer may be placed in either a low bias mode or a high bias mode by applying the appropriate logic level (see operating ranges table) to v mode1 . the bias control table lists the recommended modes of operation for various applications. v mode2 is not necessary for this pa. two operating modes are available to optimize current consumption. high bias/high power operating mode is for p out levels > 15.75 dbm. at around 16.75 dbm output power, the pa should be mode switched to low power mode for lowest quiescent current consumption. table 7: bias control application p out levels bias mode v enable v mode1 v cc v b at t high power (high bias mode) >+15.75 dbm high +1.8 v 0 v 1.5 - 4.35 v > 3.1 v med/low power (low bias mode) ? +16.75 dbm low +1.8 v +1.8 v 0.5 - 4.35 v > 3.1 v shutdown - shutdown 0 v 0 v 0.5 - 4.35 v > 3.1 v figure 3: recommended on/off timing sequence notes: (1) level might be changed after rf is on. (2) rf off defned as p in -30 dbm. (3) switching simultaneously between v mode and v en is not recommended. v en v cc note 1 rf in notes 1,2 off sequence referenced after 90 % of rise time referenced before 10 % of fall time on sequence on sequence start t_ 0n = 0 t_ 0n +1 s t_ 0n +3 s off sequence start t_ 0f f = 0 t_ 0f f+ 2 st _0 ff +3 s vcontrols venable/vmode(s ) rise/fall max 1 s defined at 10% to 90% of min/max voltage data sheet - rev 2.1 02/2012 AWT6632
8 figure 4: evaluation circuit schematic figure 5: evaluation board layout gnd gnd cplout c 4 vbatt vcc c 2 c 3 c 6 c 1 ven r f i n vmode1 r f ou t c pli n gnd gnd vmode2 c3 2.2f ceramic rf in 1 6 7 10 8 5 4 3 v batt v mode1 rf out rf in gnd v cc v en cpl out v cc c1 v batt v mode 1 v en cpl in 29 v mode2 (n/c) c5 2.2 f c2 0.1f gnd at slug cpl in cpl out rf out 33pf data sheet - rev 2.1 02/2012 AWT6632
9 figure 6: typical application circuit help3dc tm the AWT6632 power amplifer module is based on anadigics proprietary help3dc? technology. the pa is designed to operate up to 17 dbm in the low power mode, thus eliminating the need for three gain states, while still maintaining low quiescent current and high effciency in low and medium power levels. average weighted effciency can be increased by using an external switch mode power supply (smps) or dc/dc converter to reduce v cc . the directional daisy chainable coupler is integrated within the pa module, therefore there is no need for external couplers. the AWT6632 has an integrated voltage regulator, which eliminates the need for an external constant voltage source. the pa is turn on/off is controlled by v en pin. a single v mode control logic (v mode1 ) is needed to operate this device. AWT6632 requires only two calibration sweeps for system calibration, thus saving calibration time. figure 5 shows one application example on mobile board. c1 and c2 are rf bypass caps and should be placed nearby pin 1 and pin 10. bypass caps c4 and c5 may not be needed. also a t matching topology is recommended at pa rf in and rf out ports to provide matching between input tx filter and duplexer / isolator. v bat t rf in v mo de 2 v mo de 1 v en rf ou t cp l in cp l ou t gn d v cc 1 c2 rf ou t tx filt er pa _r 0 pa _0 n c5 c4 bb g nd a t s lu g rf in 50 gn d gn d gn d gn d gn d to de te ct or c du pl exer v batt smps c6 gn d gn d c3 input matching output matching data sheet - rev 2.1 02/2012 AWT6632
10 5 10 15 20 25 30 0 5 10 15 20 25 30 gain (db) pout (dbm) figure 4: wcdma gain (db) over temperature (vbatt=vcc=3.4v) - 30c 3.4vcc 25c 3.4vcc 90c 3.4vcc figure 7: wcdma gain (db) over temperature (v batt = v cc = 3.4 v) figure 8: wcdma gain (db) over voltage (t c = 25 8c) 10 15 20 25 30 0 5 10 15 20 25 30 gain (db) pout (dbm) figure 5: wcdma gain (db) over voltage (tc=25c ) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc figure 9: wcdma pae (%) over temperature (v batt = v cc = 3.4 v) figure 10: wcdma pae (%) over voltage (t c = 25 8c) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 efficiency (%) pout (dbm) figure 6: wcdma pae (%) over temperature (vbatt=vcc=3.4v) - 30 3.4cc 25c 3.4vcc 90c 3.4vcc 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 efficiency pout (dbm) figure 7: wcdma pae (%) over voltage (tc=25c) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc figure 11: wcdma aclr1 (dbc) over temperature (v batt = v cc = 3.4 v) - 55 - 50 - 45 - 40 - 35 - 30 - 25 0 5 10 15 20 25 30 aclr1 (5mhz dbc) pout (dbm) figure 8: wcdma acrl1 (dbc) over temperature (vbatt=vcc=3.4v) - 30c 3.4vcc 25c 3.4vcc 90c 3.4vcc - 55 - 50 - 45 - 40 - 35 - 30 - 25 0 5 10 15 20 25 30 aclr1 (5mhz dbc) pout (dbm) figure 9: wcdma aclr1 (dbc) over voltage (tc=25c) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc figure 12: wcdma aclr1 (dbc) over temperature (t c = 25 8c) performance data: data sheet - rev 2.1 02/2012 AWT6632
11 figure 13: package outline - 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 14: branding specifcation package package outline 6632 llllnn yy wwc c pin 1 identifier pa rt number date co de y y=y ear ; ww=w ork week c ountr y co de (c c) l ot number data sheet - rev 2.1 02/2012 AWT6632
12 figure 15: recommended pcb layout information pcb and stencil design guideline data sheet - rev 2.1 02/2012 AWT6632
13 component packaging figure 16: carrier tape pin 1 figure 17: reel data sheet - rev 2.1 02/2012 AWT6632
14 ordering information order number temperature range package description component packaging AWT6632q7 -30 o c to +90 o c rohs compliant 10 pin 3 mm x 3 mm x 1 mm surface mount module tape and reel, 2500 pieces per reel AWT6632p9 -30 o c to +90 o c rohs compliant 10 pin 3 mm x 3 mm x 1 mm surface mount module partial tape and reel warning anadigics products are not intended for use in life support appliances, devices or systems. use of an anadigics product in any such application without written consent is prohibited. import ant notice anadigics, inc. 141 mount bethel road warren, new jersey 07059, u.s.a. tel: +1 (908) 668-5000 fax: +1 (908) 668-5132 url: http://www.anadigics.com anadigics, inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifcations contained in advanced product information sheets and preliminary data sheets are subject to change prior to a products formal introduction. information in data sheets have been carefully checked and are assumed to be reliable; however, anadigics assumes no responsibilities for inaccuracies. anadigics strongly urges customers to verify that the information they are using is current before placing orders. data sheet - rev 2.1 02/2012 AWT6632

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